test_moissonnage_selune
type: Agent

Investigation of gate and drain leakage currents of AlGaN/GaN HEMTs at subthreshold regime for temperature range 300K - 400K
type: Distribution
access URL: https://hal.science/hal-00987798
format: HTML
issued: 2026-05-05T12:00:22.085786
modified: 2026-05-05T12:00:22.071952

Investigation of gate and drain leakage currents of AlGaN/GaN HEMTs at subthreshold regime for temperature range 300K - 400K
type: Dataset
contact point: Organization
  fn: CCSD
keyword: high-electron-mobility-transistor-hemt
keyword: spitronengineering-sciences-physicselectronics
keyword: transient
keyword: infoeu-reposemanticsconferenceobject
keyword: gan
keyword: trap
keyword: leakage-current
keyword: conference-papers
landing page: Microwave Integrated Circuits Conference (EuMIC), 2013 European
description: 4 pages
issued: 2026-05-05T12:00:22.082431
language: en
modified: 2026-05-05T12:00:22.082435