Pushing the limits of GaN-on-silicon device breakdown voltage for high power applications
type: Distribution
access URL: https://hal.science/hal-00976633
format: HTML
issued: 2026-05-05T15:33:20.894554
modified: 2026-05-05T15:33:20.889416

Pushing the limits of GaN-on-silicon device breakdown voltage for high power applications
type: Dataset
contact point: Organization
  fn: CCSD
keyword: infoeu-reposemanticsconferenceobject
keyword: conference-papers
landing page: CMOS Emerging Technologies Research Symposium
issued: 2026-05-05T15:33:20.893614
language: en
modified: 2026-05-05T15:33:20.893618

test_moissonnage_selune
type: Agent