Modeling of InP Etching Under ICP Cl2/Ar/N2 Plasma Mixture: Effect of N2 on the Etch Anisotropy Evolution
type: Dataset
description: International audience
issued: 2026-05-05T15:57:50.418569
language: en
modified: 2026-05-05T15:57:50.418573
contact point: Organization
  fn: CCSD
keyword: adsorption
keyword: chlorine
keyword: etching
keyword: infoeu-reposemanticsarticle
keyword: inp
keyword: journal-articles
keyword: modeling
keyword: physcondcm-msphysics-physicscondensed-matter-cond-matmaterials-science-cond-matmtrl-sci
keyword: plasma
landing page: 1612-8850

Modeling of InP Etching Under ICP Cl2/Ar/N2 Plasma Mixture: Effect of N2 on the Etch Anisotropy Evolution
type: Distribution
format: HTML
issued: 2026-05-05T15:57:50.424512
modified: 2026-05-05T15:57:50.408863
access URL: https://hal.science/hal-00975499

test_moissonnage_selune
type: Agent