Highly N-doped Silicon Nanowires as a Possible Alternative to Carbon for On-chip Electrochemical Capacitors
type: Dataset
description: International audience
landing page: Electrochemistry
keyword: electrochemical-capacitor
keyword: highly-n-doped-silicon-nanowires
keyword: infoeu-reposemanticsarticle
keyword: journal-articles
keyword: micro-device
keyword: physcondcm-msphysics-physicscondensed-matter-cond-matmaterials-science-cond-matmtrl-sci
keyword: physphysphys-opticsphysics-physicsphysics-physicsoptics-physicsoptics
keyword: spielecengineering-sciences-physicselectromagnetism
keyword: spimatengineering-sciences-physicsmaterials
keyword: spinanoengineering-sciences-physicsmicro-and-nanotechnologiesmicroelectronics
keyword: spinrjengineering-sciences-physicselectric-power
keyword: spioptiengineering-sciences-physicsoptics--photonic
keyword: spitronengineering-sciences-physicselectronics
issued: 2026-05-05T16:12:57.035894
modified: 2026-05-05T16:12:57.035899
language: en
contact point: Organization
  fn: CCSD

test_moissonnage_selune
type: Agent

Highly N-doped Silicon Nanowires as a Possible Alternative to Carbon for On-chip Electrochemical Capacitors
type: Distribution
format: HTML
access URL: https://hal.science/hal-00974867
issued: 2026-05-05T16:12:57.037790
modified: 2026-05-05T16:12:57.023860