Electrically active defects in boron doped diamond homoepitaxial layers studied from deep level transient spectroscopies and other techniques
type: Dataset
contact point: Organization
  fn: CCSD
keyword: homoepitaxial-films
keyword: boron-doped-diamond
keyword: infoeu-reposemanticsarticle
keyword: journal-articles
keyword: physcondcm-genphysics-physicscondensed-matter-cond-matother-cond-matother
keyword: deep-level-transient-spectroscopy
keyword: pacs-6855ln-7155cn-7860hk-8105uw
keyword: spinanoengineering-sciences-physicsmicro-and-nanotechnologiesmicroelectronics
keyword: electrically-active-defects
landing page: 1862-6300
description: International audience
issued: 2026-05-05T19:51:47.042134
language: en
modified: 2026-05-05T19:51:47.042139

test_moissonnage_selune
type: Agent

Electrically active defects in boron doped diamond homoepitaxial layers studied from deep level transient spectroscopies and other techniques
type: Distribution
access URL: https://hal.science/hal-00967540
format: HTML
issued: 2026-05-05T19:51:47.046569
modified: 2026-05-05T19:51:47.032721