@prefix dcat: <http://www.w3.org/ns/dcat#> .
@prefix dct: <http://purl.org/dc/terms/> .
@prefix foaf: <http://xmlns.com/foaf/0.1/> .
@prefix vcard: <http://www.w3.org/2006/vcard/ns#> .
@prefix xsd: <http://www.w3.org/2001/XMLSchema#> .

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    dct:description """
              Nanometer size field effect transistors can operate as efficient resonant or broadband terahertz detectors, mixers, phase shifters and frequency multipliers at frequencies far beyond their fundamental cut-of frequency. This work is an overview of some recent results concerning the THz detection by Si MOS transistors with back-gate, low temperatures operation, and circular polarization studies of nanometer scale field effect transistors for the detection of terahertz radiation. Also first results on graphene transistors are discussed.
            """ ;
    dct:identifier "hal-00955621" ;
    dct:issued "2026-05-06T03:31:46.395740"^^xsd:dateTime ;
    dct:language "en" ;
    dct:modified "2026-05-06T03:31:46.395744"^^xsd:dateTime ;
    dct:publisher <https://rec.harvest-normandie.data4citizen.com/organization/cce9db95-46d9-4dc2-84b6-764215d0a002> ;
    dct:title "Temperature, Back Gate and Polarization Studies in Nanotransistor based THz plasma detectors" ;
    dcat:contactPoint [ a vcard:Organization ;
            vcard:fn "CCSD" ] ;
    dcat:distribution <https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-hal-00955621v1/resource/1ecff7fa-9f6b-4705-8d6e-a66689a7235f> ;
    dcat:keyword "conference-papers",
        "electromagnetic-wave-polarisation",
        "elemental-semiconductors",
        "graphene",
        "infoeu-reposemanticsconferenceobject",
        "mosfet",
        "nanosensors",
        "physcondcm-genphysics-physicscondensed-matter-cond-matother-cond-matother",
        "physphysphys-gen-phphysics-physicsphysics-physicsgeneral-physics-physicsgen-ph",
        "plasma-devices",
        "radiation-detection",
        "silicon",
        "silicon-radiation-detectors",
        "terahertz-wave-detectors" ;
    dcat:landingPage <21st%20International%20Conference%20on%20Applied%20Electromagnetics%20and%20Communications%20ICECom> .

<21st%20International%20Conference%20on%20Applied%20Electromagnetics%20and%20Communications%20ICECom> a foaf:Document .

<https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-hal-00955621v1/resource/1ecff7fa-9f6b-4705-8d6e-a66689a7235f> a dcat:Distribution ;
    dct:format "HTML" ;
    dct:issued "2026-05-06T03:31:46.416951"^^xsd:dateTime ;
    dct:modified "2026-05-06T03:31:46.374120"^^xsd:dateTime ;
    dct:title "Temperature, Back Gate and Polarization Studies in Nanotransistor based THz plasma detectors" ;
    dcat:accessURL <https://hal.science/hal-00955621> .

<https://rec.harvest-normandie.data4citizen.com/organization/cce9db95-46d9-4dc2-84b6-764215d0a002> a foaf:Agent ;
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