Chemical topography analysis of silicon gates etched in HBr/Cl2/O2 and HBr/Cl2/O2/CF4 high density plasmas
type: Dataset
description: International audience
landing page: 0022-5355
keyword: infoeu-reposemanticsarticle
keyword: journal-articles
keyword: physphysics-physics
issued: 2026-05-06T20:46:50.638387
modified: 2026-05-06T20:46:50.638391
language: en
contact point: Organization
  fn: CCSD

test_moissonnage_selune
type: Agent

Chemical topography analysis of silicon gates etched in HBr/Cl2/O2 and HBr/Cl2/O2/CF4 high density plasmas
type: Distribution
format: HTML
access URL: https://hal.science/hal-00944892
issued: 2026-05-06T20:46:50.645818
modified: 2026-05-06T20:46:50.631034