Chemical topography analysis of silicon gates etched in HBr/Cl2/O2 and HBr/Cl2/O2/CF4 high density plasmas
type: Dataset
description: International audience
issued: 2026-05-06T20:46:50.638387
language: en
modified: 2026-05-06T20:46:50.638391
contact point: Organization
  fn: CCSD
keyword: infoeu-reposemanticsarticle
keyword: journal-articles
keyword: physphysics-physics
landing page: 0022-5355

Chemical topography analysis of silicon gates etched in HBr/Cl2/O2 and HBr/Cl2/O2/CF4 high density plasmas
type: Distribution
format: HTML
issued: 2026-05-06T20:46:50.645818
modified: 2026-05-06T20:46:50.631034
access URL: https://hal.science/hal-00944892

test_moissonnage_selune
type: Agent