Comparison between TCAD simulated and measured carrier lifetimes in CMOS photodiodes using the Open Circuit Voltage Decay method
type: Dataset
description: International audience
issued: 2026-05-07T06:40:06.894404
language: en
modified: 2026-05-07T06:40:06.894409
contact point: Organization
  fn: CCSD
keyword: infoeu-reposemanticsarticle
keyword: journal-articles
keyword: lifetime
keyword: photodiode
keyword: silicon
keyword: simulation
keyword: spioptiengineering-sciences-physicsoptics--photonic
keyword: tcad
landing page: 0038-1101

Comparison between TCAD simulated and measured carrier lifetimes in CMOS photodiodes using the Open Circuit Voltage Decay method
type: Distribution
format: HTML
issued: 2026-05-07T06:40:06.904416
modified: 2026-05-07T06:40:06.875764
access URL: https://hal.science/hal-00935974

test_moissonnage_selune
type: Agent