Millimeter-wave characterization of silicon devices under small-signal regime : instruments and measurement methodologies
type: Dataset
description: This chapter aims to describe experimental tools and techniques used for on-wafer millimeter (mm)-wave characterizations of silicon-based devices under the small-signal regime. We discuss the basics of scattering parameters (S parameters), high-frequency (HF) noise concept and measurement facilities, and expert details concerning experimental procedures. In this chapter, we describe first the basic notions of the S-parameters concept and its limitations, as well of as those HF noise. Secondly, the main experimental tools such as mm-wave vectorial network analyzer, noise setup, and on-wafer station are depicted. The third part concerns the description and the methodology of on-wafer calibration and de-embedding techniques applied for mm-wave advanced silicon devices. Finally, the last section focuses on the presentation and description of several examples of device characterizations. The main objective of this chapter is to propose a tradeoff between basic information and details of experience.
landing page: Microwave de-embedding - From theory to applications
identifier: ISBN: 978-0-12-401700-9
keyword: book-sections
keyword: characterization-techniques
keyword: equivalent-circuit-modeling
keyword: infoeu-reposemanticsbookpart
keyword: mm-wave-de-embedding
keyword: sige-hbt
keyword: silicon-mosfet
keyword: silicon-technologies
issued: 2026-05-07T14:11:11.661834
modified: 2026-05-07T14:11:11.661839
language: en
contact point: Organization
  fn: CCSD

test_moissonnage_selune
type: Agent

Millimeter-wave characterization of silicon devices under small-signal regime : instruments and measurement methodologies
type: Distribution
format: HTML
access URL: https://hal.science/hal-00926037
issued: 2026-05-07T14:11:11.663378
modified: 2026-05-07T14:11:11.649914