@prefix dcat: <http://www.w3.org/ns/dcat#> .
@prefix dct: <http://purl.org/dc/terms/> .
@prefix foaf: <http://xmlns.com/foaf/0.1/> .
@prefix vcard: <http://www.w3.org/2006/vcard/ns#> .
@prefix xsd: <http://www.w3.org/2001/XMLSchema#> .

<https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-hal-00906019v1> a dcat:Dataset ;
    dct:description "International audience" ;
    dct:identifier "hal-00906019" ;
    dct:issued "2026-05-08T04:51:11.140518"^^xsd:dateTime ;
    dct:language "en" ;
    dct:modified "2026-05-08T04:51:11.140522"^^xsd:dateTime ;
    dct:publisher <https://rec.harvest-normandie.data4citizen.com/organization/cce9db95-46d9-4dc2-84b6-764215d0a002> ;
    dct:title "P-type and N-type multi-gate polycrystalline silicon vertical thin film transistors based on low-temperature technology" ;
    dcat:contactPoint [ a vcard:Organization ;
            vcard:fn "CCSD" ] ;
    dcat:distribution <https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-hal-00906019v1/resource/26479510-a4d0-4240-a68a-5c7a51ee6305> ;
    dcat:keyword "3d-structure",
        "infoeu-reposemanticsarticle",
        "journal-articles",
        "plasma-etching",
        "polycrystalline-silicon",
        "spitronengineering-sciences-physicselectronics",
        "thin-film-transistor-tft" ;
    dcat:landingPage <ISSN:%200038-1101> .

<ISSN:%200038-1101> a foaf:Document .

<https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-hal-00906019v1/resource/26479510-a4d0-4240-a68a-5c7a51ee6305> a dcat:Distribution ;
    dct:format "HTML" ;
    dct:issued "2026-05-08T04:51:11.154870"^^xsd:dateTime ;
    dct:modified "2026-05-08T04:51:11.132540"^^xsd:dateTime ;
    dct:title "P-type and N-type multi-gate polycrystalline silicon vertical thin film transistors based on low-temperature technology" ;
    dcat:accessURL <https://hal.science/hal-00906019> .

<https://rec.harvest-normandie.data4citizen.com/organization/cce9db95-46d9-4dc2-84b6-764215d0a002> a foaf:Agent ;
    foaf:name "test_moissonnage_selune" .