Thermoelectric and micro-Raman measurements of carrier density and mobility in heavily Si-doped GaN wires
type: Dataset
description: International audience
issued: 2026-05-08T05:11:02.636205
language: en
modified: 2026-05-08T05:11:02.636210
contact point: Organization
  fn: CCSD
keyword: carrier-concentration
keyword: carrier-mobility
keyword: gan
keyword: infoeu-reposemanticsarticle
keyword: journal-articles
keyword: nanowires
keyword: physcondcm-msphysics-physicscondensed-matter-cond-matmaterials-science-cond-matmtrl-sci
keyword: raman-scattering
keyword: semiconductors
keyword: si-doping
keyword: spinanoengineering-sciences-physicsmicro-and-nanotechnologiesmicroelectronics
keyword: thermoelectric-effect
landing page: 0003-6951

Thermoelectric and micro-Raman measurements of carrier density and mobility in heavily Si-doped GaN wires
type: Distribution
format: HTML
issued: 2026-05-08T05:11:02.638819
modified: 2026-05-08T05:11:02.620950
access URL: https://hal.science/hal-00905599

test_moissonnage_selune
type: Agent