@prefix dcat: <http://www.w3.org/ns/dcat#> .
@prefix dct: <http://purl.org/dc/terms/> .
@prefix foaf: <http://xmlns.com/foaf/0.1/> .
@prefix vcard: <http://www.w3.org/2006/vcard/ns#> .
@prefix xsd: <http://www.w3.org/2001/XMLSchema#> .

<https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-hal-00903693v1> a dcat:Dataset ;
    dct:description """
              Titanium thin films were deposited by DC magnetron sputtering. The glancing angle deposition (GLAD) method was implemented to prepare two series of titanium films: perpendicular and oriented columnar structures. The first series was obtained with a conventional incident angle α of the sputtered particles (α = 0°), whereas the second one used a grazing incident angle α = 85°. Afterwards, the films were annealed in air using six cycles of temperature ranging from 293 K to 773 K. DC electrical conductivity was measured during the annealing treatment. Films deposited by conventional sputtering (α = 0°) kept a typical metallic-like behavior versus temperature (σ300 K = 2.0 × 10^6 S m-1 and TCR293 K = 1.52 × 10^-3 K-1), whereas those sputtered with α = 85° showed a gradual transition from metal to dielectric. Such a transition was mainly attributed to the high porous structure, which favors the oxidation of titanium films to tend to the TiO2 compound.
            """ ;
    dct:identifier "hal-00903693" ;
    dct:issued "2026-05-08T06:36:40.675317"^^xsd:dateTime ;
    dct:language "en" ;
    dct:modified "2026-05-08T06:36:40.675321"^^xsd:dateTime ;
    dct:publisher <https://rec.harvest-normandie.data4citizen.com/organization/cce9db95-46d9-4dc2-84b6-764215d0a002> ;
    dct:title "Metal-to-Dielectric transition induced by annealing of oriented titanium thin films" ;
    dcat:contactPoint [ a vcard:Organization ;
            vcard:fn "CCSD" ] ;
    dcat:distribution <https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-hal-00903693v1/resource/79dab0a2-aaef-4a48-8a49-0c309dd3bc94> ;
    dcat:keyword "dielectric",
        "electrical-properties",
        "infoeu-reposemanticsarticle",
        "journal-articles",
        "metal",
        "physcondcm-msphysics-physicscondensed-matter-cond-matmaterials-science-cond-matmtrl-sci",
        "spimatengineering-sciences-physicsmaterials",
        "spinanoengineering-sciences-physicsmicro-and-nanotechnologiesmicroelectronics",
        "spinrjengineering-sciences-physicselectric-power",
        "sputtering",
        "thin-films" ;
    dcat:landingPage <Functional%20Materials%20Letter> .

<Functional%20Materials%20Letter> a foaf:Document .

<https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-hal-00903693v1/resource/79dab0a2-aaef-4a48-8a49-0c309dd3bc94> a dcat:Distribution ;
    dct:format "HTML" ;
    dct:issued "2026-05-08T06:36:40.677493"^^xsd:dateTime ;
    dct:modified "2026-05-08T06:36:40.663840"^^xsd:dateTime ;
    dct:title "Metal-to-Dielectric transition induced by annealing of oriented titanium thin films" ;
    dcat:accessURL <https://hal.science/hal-00903693> .

<https://rec.harvest-normandie.data4citizen.com/organization/cce9db95-46d9-4dc2-84b6-764215d0a002> a foaf:Agent ;
    foaf:name "test_moissonnage_selune" .