@prefix dcat: <http://www.w3.org/ns/dcat#> .
@prefix dct: <http://purl.org/dc/terms/> .
@prefix foaf: <http://xmlns.com/foaf/0.1/> .
@prefix vcard: <http://www.w3.org/2006/vcard/ns#> .
@prefix xsd: <http://www.w3.org/2001/XMLSchema#> .

<https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-hal-00877773v1> a dcat:Dataset ;
    dct:description """
              AlGaN/GaN HEMTs on silicon substrates have been fabricated and their static and small-signal RF characteristics investigated. The AlGaN/GaN material structures were grown on (111) p-Si by LP-MOVPE. Devices exhibit a saturation current of 0.91 A/mm, a good pinchoff and a peak extrinsic transconductance of 122 mS/mm. A unity current gain frequency of 12.5 GHz and max = 0.83 were obtained. The highest saturation current reported so far, static output characteristics of up to 20 V and breakdown voltage at pinchoff higher than 40 V demonstrate that the devices are capable of handling 16 W/mm static heat dissipation
            """ ;
    dct:identifier "hal-00877773" ;
    dct:issued "2026-05-09T05:29:43.449548"^^xsd:dateTime ;
    dct:language "en" ;
    dct:modified "2026-05-09T05:29:43.449553"^^xsd:dateTime ;
    dct:publisher <https://rec.harvest-normandie.data4citizen.com/organization/cce9db95-46d9-4dc2-84b6-764215d0a002> ;
    dct:title "AlGaN/GaN HEMTs on HR silicon substrate (111) with an AlN seed film grown by PVD" ;
    dcat:contactPoint [ a vcard:Organization ;
            vcard:fn "CCSD" ] ;
    dcat:distribution <https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-hal-00877773v1/resource/b1d91395-7d26-4007-8ff5-ac72ab2e828f> ;
    dcat:keyword "conference-papers",
        "gan",
        "infoeu-reposemanticsconferenceobject",
        "modfets",
        "semiconductor-device-fabrication",
        "silicon",
        "spiengineering-sciences-physics" ;
    dcat:landingPage <Proceedings%20of%2022nd%20European%20Workshop%20on%20Heterostructure%20Technology%2C%20HeTech%202013> .

<Proceedings%20of%2022nd%20European%20Workshop%20on%20Heterostructure%20Technology%2C%20HeTech%202013> a foaf:Document .

<https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-hal-00877773v1/resource/b1d91395-7d26-4007-8ff5-ac72ab2e828f> a dcat:Distribution ;
    dct:format "HTML" ;
    dct:issued "2026-05-09T05:29:43.452312"^^xsd:dateTime ;
    dct:modified "2026-05-09T05:29:43.441405"^^xsd:dateTime ;
    dct:title "AlGaN/GaN HEMTs on HR silicon substrate (111) with an AlN seed film grown by PVD" ;
    dcat:accessURL <https://hal.science/hal-00877773> .

<https://rec.harvest-normandie.data4citizen.com/organization/cce9db95-46d9-4dc2-84b6-764215d0a002> a foaf:Agent ;
    foaf:name "test_moissonnage_selune" .