AlGaN/GaN HEMTs on HR silicon substrate (111) with an AlN seed film grown by PVD
type: Dataset
contact point: Organization
  fn: CCSD
keyword: semiconductor-device-fabrication
keyword: infoeu-reposemanticsconferenceobject
keyword: silicon
keyword: spiengineering-sciences-physics
keyword: gan
keyword: conference-papers
keyword: modfets
landing page: Proceedings of 22nd European Workshop on Heterostructure Technology, HeTech 2013
description: AlGaN/GaN HEMTs on silicon substrates have been fabricated and their static and small-signal RF characteristics investigated. The AlGaN/GaN material structures were grown on (111) p-Si by LP-MOVPE. Devices exhibit a saturation current of 0.91 A/mm, a good pinchoff and a peak extrinsic transconductance of 122 mS/mm. A unity current gain frequency of 12.5 GHz and max = 0.83 were obtained. The highest saturation current reported so far, static output characteristics of up to 20 V and breakdown voltage at pinchoff higher than 40 V demonstrate that the devices are capable of handling 16 W/mm static heat dissipation
issued: 2026-05-09T05:29:43.449548
language: en
modified: 2026-05-09T05:29:43.449553

test_moissonnage_selune
type: Agent

AlGaN/GaN HEMTs on HR silicon substrate (111) with an AlN seed film grown by PVD
type: Distribution
access URL: https://hal.science/hal-00877773
format: HTML
issued: 2026-05-09T05:29:43.452312
modified: 2026-05-09T05:29:43.441405