Correlation of polarity and crystal structure with optoelectronic and transport properties of GaN/AlN/GaN nanowire sensors
type: Dataset
contact point: Organization
  fn: CCSD
keyword: sensor
keyword: journal-articles
keyword: physcondcm-msphysics-physicscondensed-matter-cond-matmaterials-science-cond-matmtrl-sci
keyword: infoeu-reposemanticsarticle
keyword: polarity
keyword: gan
keyword: photocurrent
keyword: nanowire
keyword: scanning-transmission-electron-microscopy
landing page: 1530-6984
description: International audience
issued: 2026-05-09T16:41:14.714763
language: en
modified: 2026-05-09T16:41:14.714768

test_moissonnage_selune
type: Agent

Correlation of polarity and crystal structure with optoelectronic and transport properties of GaN/AlN/GaN nanowire sensors
type: Distribution
access URL: https://hal.science/hal-00863667
format: HTML
issued: 2026-05-09T16:41:14.716388
modified: 2026-05-09T16:41:14.704407