Effect of ECR etching conditions of (100)Ib diamond substrates on homoepitaxial low boron doped diamond layer quality
type: Dataset
description: 6 pages
landing page: 1862-6300
keyword: 6835ct-7860hk-8105uw-8115gh-8165cf
keyword: diamond
keyword: dry-etch
keyword: homoepitaxial-growth
keyword: infoeu-reposemanticsarticle
keyword: journal-articles
keyword: physcondcm-msphysics-physicscondensed-matter-cond-matmaterials-science-cond-matmtrl-sci
issued: 2026-05-10T01:09:51.794653
modified: 2026-05-10T01:09:51.794658
language: en
contact point: Organization
  fn: CCSD

test_moissonnage_selune
type: Agent

Effect of ECR etching conditions of (100)Ib diamond substrates on homoepitaxial low boron doped diamond layer quality
type: Distribution
format: HTML
access URL: https://hal.science/hal-00853424
issued: 2026-05-10T01:09:51.800363
modified: 2026-05-10T01:09:51.786499