Electron mobility in phosphorous doped {111} homoepitaxial diamond
type: Dataset
contact point: Organization
  fn: CCSD
keyword: infoeu-reposemanticsarticle
keyword: elemental-semiconductors
keyword: phosphorus
keyword: doping-profiles
keyword: semiconductor-epitaxial-layer
keyword: impurity-scattering
keyword: journal-articles
keyword: physcondcm-msphysics-physicscondensed-matter-cond-matmaterials-science-cond-matmtrl-sci
keyword: 7361cw-7210fk-6172sd-7350jt
keyword: hall-mobility
keyword: diamond
landing page: 0003-6951
description: 3 pages
issued: 2026-05-10T01:07:42.514173
language: en
modified: 2026-05-10T01:07:42.514178

test_moissonnage_selune
type: Agent

Electron mobility in phosphorous doped {111} homoepitaxial diamond
type: Distribution
access URL: https://hal.science/hal-00853416
format: HTML
issued: 2026-05-10T01:07:42.533648
modified: 2026-05-10T01:07:42.499152