Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applications
type: Dataset
description: San Francisco, California, United States
issued: 2026-05-10T10:14:56.823822
language: en
modified: 2026-05-10T10:14:56.823827
contact point: Organization
  fn: CCSD
keyword: electroluminescence-and-photoluminescence
keyword: gapsi
keyword: infoeu-reposemanticsarticle
keyword: journal-articles
keyword: monolithic-integration
keyword: photonics-on-silicon
keyword: quantum-dots
keyword: quantum-wells
keyword: solar-cells
keyword: spioptiengineering-sciences-physicsoptics--photonic
keyword: tem-and-xrd
landing page: 0277-786X

Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applications
type: Distribution
format: HTML
issued: 2026-05-10T10:14:56.826623
modified: 2026-05-10T10:14:56.807763
access URL: https://hal.science/hal-00842763

test_moissonnage_selune
type: Agent