Polarization and Frequency studies of Si MOSFET Terahertz Detectors
type: Dataset
description: Test chips with Si MOSFETs integrating bow tie antennas are investigated to check the polarization and frequency dependence of THz sensitivity. The azimuthal angle corresponding to the maximum sensitivity changes with the pixel position on the chip. This means that the surrounding pixels affect the bow tie radiation pattern and possibly contribute to the antenna coupling. The frequency dependence suggests the presence of surface modes phenomena in the silicon substrate.
landing page: International Conference on Infrared Millimeter and Terahertz Waves
keyword: antenna-radiation-patterns
keyword: bow-tie-antennas
keyword: conference-papers
keyword: electromagnetic-wave-polarisation
keyword: elemental-semiconductors
keyword: infoeu-reposemanticsconferenceobject
keyword: mosfet
keyword: physphysphys-gen-phphysics-physicsphysics-physicsgeneral-physics-physicsgen-ph
keyword: silicon
keyword: submillimetre-wave-transistors
keyword: terahertz-wave-detectors
issued: 2026-05-11T08:56:09.725955
modified: 2026-05-11T08:56:09.725959
language: en
contact point: Organization
  fn: CCSD

test_moissonnage_selune
type: Agent

Polarization and Frequency studies of Si MOSFET Terahertz Detectors
type: Distribution
format: HTML
access URL: https://hal.science/hal-00816705
issued: 2026-05-11T08:56:09.750631
modified: 2026-05-11T08:56:09.710604