@prefix dcat: <http://www.w3.org/ns/dcat#> .
@prefix dct: <http://purl.org/dc/terms/> .
@prefix foaf: <http://xmlns.com/foaf/0.1/> .
@prefix vcard: <http://www.w3.org/2006/vcard/ns#> .
@prefix xsd: <http://www.w3.org/2001/XMLSchema#> .

<https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-hal-00816617v1> a dcat:Dataset ;
    dct:description """
              Semiconductor nanowires (NWs) represent an ideal building block for implementing rectifying diodes or plasma­ wave detectors that could operate well into the THz, thanks to the typical attofarad-order capacitance. Despite the strong effort in developing these nanostructures for a new generation of complementary metal-oxide semi­ conductors (CMOS), memory and photonic devices, their potential as radiation sensors into the Terahertz is just starting to be explored. We report on the development of NW-based field effect transistors operating as high sensitivity THz detectors in the 0.3 - 2.8 THz range. By feeding the radiation field of either an electronic THz source or a quantum cascade laser (QCL) at the gate-source electrodes by means of a wide band dipole antenna, we measured a photovoltage signal corresponding to responsivity values up to 100 V IW, with impressive noise equivalent power levels < 6 x 10-11W/Hz at room temperature and a > 300kHz modulation bandwidth. The potential scalability to even higher frequencies and the technological feasibility of realizing multi-pixel arrays coupled with QCL sources make the proposed technology highly competitive for a future generation of THz detection systems.
            """ ;
    dct:identifier "hal-00816617" ;
    dct:issued "2026-05-11T09:01:17.627140"^^xsd:dateTime ;
    dct:language "en" ;
    dct:modified "2026-05-11T09:01:17.627146"^^xsd:dateTime ;
    dct:publisher <https://rec.harvest-normandie.data4citizen.com/organization/cce9db95-46d9-4dc2-84b6-764215d0a002> ;
    dct:title "Room-temperature nanowire terahertz photodetectors" ;
    dcat:contactPoint [ a vcard:Organization ;
            vcard:fn "CCSD" ] ;
    dcat:distribution <https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-hal-00816617v1/resource/d7947595-8455-425d-ad7f-a0e74573b5b8> ;
    dcat:keyword "antennas",
        "capacitance",
        "conference-papers",
        "data-storage",
        "diodes",
        "electrodes",
        "field-effect-transistors",
        "infoeu-reposemanticsconferenceobject",
        "metals",
        "modulation",
        "nanofibers",
        "nanostructures",
        "physphysphys-gen-phphysics-physicsphysics-physicsgeneral-physics-physicsgen-ph" ;
    dcat:landingPage <Proceedings%20SPIE%2C%208631%2C%20Quantum%20Sensing%20and%20Nanophotonic%20Devices%20X> .

<Proceedings%20SPIE%2C%208631%2C%20Quantum%20Sensing%20and%20Nanophotonic%20Devices%20X> a foaf:Document .

<https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-hal-00816617v1/resource/d7947595-8455-425d-ad7f-a0e74573b5b8> a dcat:Distribution ;
    dct:format "HTML" ;
    dct:issued "2026-05-11T09:01:17.629784"^^xsd:dateTime ;
    dct:modified "2026-05-11T09:01:17.604844"^^xsd:dateTime ;
    dct:title "Room-temperature nanowire terahertz photodetectors" ;
    dcat:accessURL <https://hal.science/hal-00816617> .

<https://rec.harvest-normandie.data4citizen.com/organization/cce9db95-46d9-4dc2-84b6-764215d0a002> a foaf:Agent ;
    foaf:name "test_moissonnage_selune" .