@prefix dcat: <http://www.w3.org/ns/dcat#> .
@prefix dct: <http://purl.org/dc/terms/> .
@prefix foaf: <http://xmlns.com/foaf/0.1/> .
@prefix vcard: <http://www.w3.org/2006/vcard/ns#> .
@prefix xsd: <http://www.w3.org/2001/XMLSchema#> .

<https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-hal-00814472v1> a dcat:Dataset ;
    dct:description """
              Magnetotransport and magnetooptics investigations of plasmon excitations in large-area grating-gate terahertz modulators based on AlGaN/GaN high-electron-mobility transistors with different grating-gate duty cycle are reported. We demonstrate that the effect of the gate potential on the ungated region extends beyond the conventional fringing effect distance, ranging over 250-350 nm instead of expected 26-30 nm. This phenomenon enables excitation of the localized gated magnetoplasmon modes only if the inter-finger spacing in the grating gate exceeds 350 nm. For narrower slits, only the collective gated magnetoplasmon modes extending over the entire period of the structure can be excited.
            """ ;
    dct:identifier "hal-00814472" ;
    dct:issued "2026-05-11T11:00:00.553859"^^xsd:dateTime ;
    dct:language "en" ;
    dct:modified "2026-05-11T11:00:00.553864"^^xsd:dateTime ;
    dct:publisher <https://rec.harvest-normandie.data4citizen.com/organization/cce9db95-46d9-4dc2-84b6-764215d0a002> ;
    dct:title "Localized and collective magnetoplasmon excitations in AlGaN/GaN-based grating-gate terahertz modulators" ;
    dcat:contactPoint [ a vcard:Organization ;
            vcard:fn "CCSD" ] ;
    dcat:distribution <https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-hal-00814472v1/resource/7bf66eed-b9af-4066-a242-77feb0bab90a> ;
    dcat:keyword "aluminium-compounds",
        "gallium-compounds",
        "galvanomagnetic-effects",
        "high-electron-mobility-transistors",
        "iii-v-semiconductors",
        "infoeu-reposemanticsarticle",
        "journal-articles",
        "physcondcm-msphysics-physicscondensed-matter-cond-matmaterials-science-cond-matmtrl-sci",
        "plasmonics",
        "wide-band-gap-semiconductors" ;
    dcat:landingPage <ISSN:%200003-6951> .

<ISSN:%200003-6951> a foaf:Document .

<https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-hal-00814472v1/resource/7bf66eed-b9af-4066-a242-77feb0bab90a> a dcat:Distribution ;
    dct:format "HTML" ;
    dct:issued "2026-05-11T11:00:00.558101"^^xsd:dateTime ;
    dct:modified "2026-05-11T11:00:00.540815"^^xsd:dateTime ;
    dct:title "Localized and collective magnetoplasmon excitations in AlGaN/GaN-based grating-gate terahertz modulators" ;
    dcat:accessURL <https://hal.science/hal-00814472> .

<https://rec.harvest-normandie.data4citizen.com/organization/cce9db95-46d9-4dc2-84b6-764215d0a002> a foaf:Agent ;
    foaf:name "test_moissonnage_selune" .