Terahertz Imaging with InP High-electron-mobility Transistors
type: Dataset
description: In this work, the performance of InP-based HEMTs as a THz detector was experimentally studied. The nature of the THz rectification by the two-dimensional plasmons in which the DC drain current variation Delta I-d becomes maximal around the threshold voltage was observed. Based on the imaging measurement, it was confirmed that our HEMTs device can work for sensitive THz imaging at 0.3 THz. The directivity of the detector was characterized with the maximum responsivity of 26.1 V/W at theta = 160 degrees.
issued: 2026-05-11T11:13:26.864086
language: en
modified: 2026-05-11T11:13:26.864091
contact point: Organization
  fn: CCSD
keyword: conference-papers
keyword: detection
keyword: high-electron-mobility-transistor
keyword: imaging
keyword: infoeu-reposemanticsconferenceobject
keyword: physcondcm-msphysics-physicscondensed-matter-cond-matmaterials-science-cond-matmtrl-sci
keyword: plasmon
keyword: terahertz
landing page: Proceedings of SPIE

Terahertz Imaging with InP High-electron-mobility Transistors
type: Distribution
format: HTML
issued: 2026-05-11T11:13:26.885518
modified: 2026-05-11T11:13:26.851729
access URL: https://hal.science/hal-00814213

test_moissonnage_selune
type: Agent