Semiconductor nanowire field-effect transistors: towards high-frequency THz detector
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access URL: https://hal.science/hal-00814140
format: HTML
issued: 2026-05-11T11:15:39.776313
modified: 2026-05-11T11:15:39.742484

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Semiconductor nanowire field-effect transistors: towards high-frequency THz detector
type: Dataset
contact point: Organization
  fn: CCSD
keyword: field-effect-transistors
keyword: physcondcm-msphysics-physicscondensed-matter-cond-matmaterials-science-cond-matmtrl-sci
keyword: conference-papers
keyword: semiconductor-nanowires
keyword: thz-detectors
keyword: infoeu-reposemanticsconferenceobject
landing page: Proceedings of SPIE
description: We report about fabrication and characterization of semiconductor nanowire-based field effect transistor devices which can act as detectors for electromagnetic radiation in the THz frequency range. The detection mechanism is based on the nonlinear transfer characteristic of the transistor, which is used to realize signal rectification; the small capacitance related to the nanowire small cross section is beneficial in allowing a good device sensitivity up to 1.5 THz at room temperature. Due to the extreme flexibility with which semiconductor nanowires can be grown, we discuss how the basic, homogeneous InAs or InSb nanowire FETs can be improved to realize smarter devices and functionalities.
issued: 2026-05-11T11:15:39.758056
language: en
modified: 2026-05-11T11:15:39.758061