Anomaly and defects characterization by IDS(VDS) and drain-current DLTS of Al0.25Ga0.75N/GaN/SiC HEMT's
type: Dataset
keyword: conference-papers
keyword: infoeu-reposemanticsconferenceobject
issued: 2026-05-12T15:31:57.012267
modified: 2026-05-12T15:31:57.012273
language: en
contact point: Organization
  fn: CCSD

test_moissonnage_selune
type: Agent

Anomaly and defects characterization by IDS(VDS) and drain-current DLTS of Al0.25Ga0.75N/GaN/SiC HEMT's
type: Distribution
format: HTML
access URL: https://hal.science/hal-00801156
issued: 2026-05-12T15:31:57.060326
modified: 2026-05-12T15:31:57.001121