@prefix dcat: <http://www.w3.org/ns/dcat#> .
@prefix dct: <http://purl.org/dc/terms/> .
@prefix foaf: <http://xmlns.com/foaf/0.1/> .
@prefix vcard: <http://www.w3.org/2006/vcard/ns#> .
@prefix xsd: <http://www.w3.org/2001/XMLSchema#> .

<https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-hal-00704339v1> a dcat:Dataset ;
    dct:description """
              The growth of semiconductor nanowires (NWs) has recently opened new paths to silicon integration of device families such as light-emitting diodes, high-efficiency photovoltaics, or high-responsivity photodetectors. It is also offering a wealth of new approaches for the development of a future generation of nanoelectronic devices. Here we demonstrate that semiconductor nanowires can also be used as building blocks for the realization of high-sensitivity terahertz detectors based on a 1D field-effect transistor, configuration. In order to take advantage of the low effective mass and high mobilities achievable in III-V compounds, we have used InAs nanowires, grown by vapor-phase epitaxy, and properly doped with selenium to control the charge density and to optimize source drain and contact resistance. The detection mechanism exploits the nonlinearity of the transfer characteristics: the terahertz radiation field is fed at the gate-source electrodes with wide band antennas, and the rectified signal is then read at the output in the form of a DC drain voltage. Significant responsivity values (>1 V/W) at 0.3 THz have been obtained with noise equivalent powers (NEP) < 2 x 10(-9) W/(Hz)(1/2) at room temperature. The large existing margins for technology improvements, the scalability to higher frequencies, and the possibility of realizing multipiixel arrays, make these devices highly competitive as a future solution for terahertz detection.
            """ ;
    dct:identifier "hal-00704339" ;
    dct:issued "2026-05-16T03:46:35.491190"^^xsd:dateTime ;
    dct:language "en" ;
    dct:modified "2026-05-16T03:46:35.491196"^^xsd:dateTime ;
    dct:publisher <https://rec.harvest-normandie.data4citizen.com/organization/cce9db95-46d9-4dc2-84b6-764215d0a002> ;
    dct:title "Room-Temperature Terahertz Detectors Based on Semiconductor Nanowire Field-Effect Transistors" ;
    dcat:contactPoint [ a vcard:Organization ;
            vcard:fn "CCSD" ] ;
    dcat:distribution <https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-hal-00704339v1/resource/21a0ed4c-c292-4dd4-8dc0-00a14844a347> ;
    dcat:keyword "devices",
        "field-effect-transistors",
        "gate",
        "growth",
        "infoeu-reposemanticsarticle",
        "journal-articles",
        "mobility",
        "nanophotonic-devices",
        "nanowires",
        "nonresonant-detection",
        "physcondcm-genphysics-physicscondensed-matter-cond-matother-cond-matother",
        "radiation",
        "tera-hertz" ;
    dcat:landingPage <ISSN:%201530-6984> .

<ISSN:%201530-6984> a foaf:Document .

<https://rec.harvest-normandie.data4citizen.com/dataset/oai-hal-hal-00704339v1/resource/21a0ed4c-c292-4dd4-8dc0-00a14844a347> a dcat:Distribution ;
    dct:format "HTML" ;
    dct:issued "2026-05-16T03:46:35.524634"^^xsd:dateTime ;
    dct:modified "2026-05-16T03:46:35.456763"^^xsd:dateTime ;
    dct:title "Room-Temperature Terahertz Detectors Based on Semiconductor Nanowire Field-Effect Transistors" ;
    dcat:accessURL <https://hal.science/hal-00704339> .

<https://rec.harvest-normandie.data4citizen.com/organization/cce9db95-46d9-4dc2-84b6-764215d0a002> a foaf:Agent ;
    foaf:name "test_moissonnage_selune" .