Study of the stability of 3C-SiC single crystals using high resolution diffuse X-ray scattering
type: Dataset
description: International audience
issued: 2026-05-22T04:57:30.970977
language: en
modified: 2026-05-22T04:57:30.970985
contact point: Organization
  fn: CCSD
keyword: conference-papers
keyword: crystal-defects
keyword: infoeu-reposemanticsconferenceobject
keyword: nanostructured-materials
keyword: semiconductor-materials
keyword: x-ray-scattering
landing page: 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES:

Study of the stability of 3C-SiC single crystals using high resolution diffuse X-ray scattering
type: Distribution
format: HTML
issued: 2026-05-22T04:57:30.992003
modified: 2026-05-22T04:57:30.946382
access URL: https://hal.science/hal-00686913

test_moissonnage_selune
type: Agent