test_moissonnage_selune
type: Agent

Sensitivity of n-type InP epitaxial layers to NO2 sensor based on
type: Dataset
contact point: Organization
  fn: CCSD
keyword: indium-phosphide
keyword: infoeu-reposemanticsconferenceobject
keyword: epitaxial-layers
keyword: surface-states
keyword: computer-simulations
keyword: spiotherengineering-sciences-physicsother
keyword: conference-papers
keyword: resistance
keyword: gas-sensors
description: The response time and signal stability were also investigated. Furthermore, the influence of surface states and near-surface region on sensor parameters in terms of the resistance relative changes was shown from numerical simulations. The analysis of the measured photoelectron spectroscopy (XPS) spectra confirmed the complex chemical composition of the InP oxides, which gives rise to the high density of surface states.
issued: 2026-05-07T17:14:13.275850
language: en
modified: 2026-05-07T17:14:13.275855

Sensitivity of n-type InP epitaxial layers to NO2 sensor based on
type: Distribution
access URL: https://hal.science/hal-00092192
format: HTML
issued: 2026-05-07T17:14:13.277245
modified: 2026-05-07T17:14:13.265350