Multiexponential photoluminescence decay in indirect-gap semiconductor nanocrystals
type: Dataset
description: The origin of the multiexponential photoluminescence (PL) decay of Si quantum dots (QDs) has been debated for a long time. We present studies combining time-resolved PL experiments and tight binding calculations of phonon-assisted optical transitions showing that the distribution of lifetimes and its wavelength dependence are quantitatively predictable and can be interpreted as intrinsic properties of the QDs due to the indirect nature of the Si bandgap. This result can be generalized to QD ensembles of any indirect gap semiconductor.
issued: 2026-05-07T18:05:25.148990
language: en
modified: 2026-05-07T18:05:25.148994
contact point: Organization
  fn: CCSD
keyword: 7322-f-7867bf
keyword: chimtheochemical-sciencestheoretical-andor-physical-chemistry
keyword: elemental-semiconductors
keyword: energy-gap
keyword: infoeu-reposemanticsarticle
keyword: journal-articles
keyword: nanostructured-materials
keyword: photoluminescence
keyword: semiconductor-quantum-dots
keyword: silicon
keyword: tight-binding-calculations
keyword: time-resolved-spectra
landing page: 1098-0121

Multiexponential photoluminescence decay in indirect-gap semiconductor nanocrystals
type: Distribution
format: HTML
issued: 2026-05-07T18:05:25.155345
modified: 2026-05-07T18:05:25.136022
access URL: https://hal.science/hal-00092072

test_moissonnage_selune
type: Agent