Kinetics of the heteroepitaxial growth of Ge...
URL: https://hal.science/hal-00087081
Dataset description:
The Ge growth at 330 °C by ultrahigh vacuum chemical vapour deposition is investigated in real time by reflection high energy electron diffraction (RHEED) in combination with...
Source: Kinetics of the heteroepitaxial growth of Ge layer at low temperature on Si(001) in UHV-CVD.
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Additional Information
| Field | Value |
|---|---|
| Data last updated | unknown |
| Metadata last updated | May 9, 2026 |
| Created | unknown |
| Format | HTML |
| License | No License Provided |
| Created | 5 months ago |
| Id | 77db80ac-1562-41c5-b2ea-0c24aee35443 |
| Package id | oai-hal-hal-00087081v1 |
| Resource type | HTML |
| State | active |