Continuous-wave CO2 laser irradiation into gaseous mixture of triethylborate and diethoxy(dimethyl)silane represents a very feasible way of direct heat-induced conversion of two precursors, the one with the SiOR and the other with the BOR bonds, to the nanostructured polyborocarbosiloxane phase. These materials contain SiOB, SiO2Xn (n=1, 2; X = C, Si), SiO3X (X = Si, C), SiO4, B(OSi)3, B(OB)3−x(OSi)x and BO3 configurations, possess SiC and BC bonds, have spongy morphology, high specific area and high thermal stability.
IR laser production of nanostructured polyborocarbosiloxane powders with SiOB bonds