Thin films of Ba(Ti,Zr)O3 containing about 65% Zr have been grown using rf magnetron sputtering with various substrate temperatures (500–700 °C). All of them display ferroelectric relaxor features at low temperature (T < 200 K), namely a frequency dependent maximum of the dielectric permittivity and dispersion on the low temperature side of the peak. This is the first time that such a behaviour has been evidenced in lead-free sputtered thin films.
Relaxor properties of sputtered Ba(Ti,Zr)O3 thin films