Relaxor properties of sputtered Ba(Ti,Zr)O3 thin films
type: Dataset
description: Thin films of Ba(Ti,Zr)O3 containing about 65% Zr have been grown using rf magnetron sputtering with various substrate temperatures (500–700 °C). All of them display ferroelectric relaxor features at low temperature (T < 200 K), namely a frequency dependent maximum of the dielectric permittivity and dispersion on the low temperature side of the peak. This is the first time that such a behaviour has been evidenced in lead-free sputtered thin films.
issued: 2026-05-14T13:20:42.650054
language: en
modified: 2026-05-14T13:20:42.650059
contact point: Organization
  fn: CCSD
keyword: baryum
keyword: chimmatechemical-sciencesmaterial-chemistry
keyword: ferroelectric-relaxor
keyword: infoeu-reposemanticsarticle
keyword: inorganic-compounds
keyword: journal-articles
keyword: oxides
keyword: thin-films
keyword: titanium
keyword: zirconium
landing page: 0022-3727

Relaxor properties of sputtered Ba(Ti,Zr)O3 thin films
type: Distribution
format: HTML
issued: 2026-05-14T13:20:42.672729
modified: 2026-05-14T13:20:42.628642
access URL: https://hal.science/hal-00078741

test_moissonnage_selune
type: Agent