test_moissonnage_selune
type: Agent

Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate
type: Dataset
contact point: Organization
  fn: CCSD
keyword: spitronengineering-sciences-physicselectronics
keyword: atomic-switches
keyword: flexible-electronics
keyword: conductive-bridge-memory
keyword: infoeu-reposemanticsarticle
keyword: atomic-force-microscopy
keyword: ge2sb2te5
keyword: journal-articles
keyword: rram
keyword: gst
keyword: non-volatile-memory
landing page: 0038-1101
description: 7 pages
issued: 2026-05-30T04:00:18.074742
language: en
modified: 2026-05-30T04:00:18.074749

Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate
type: Distribution
access URL: https://hal-emse.ccsd.cnrs.fr/emse-00767177
format: HTML
issued: 2026-05-30T04:00:18.092972
modified: 2026-05-30T04:00:18.028261