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Structural and electronic properties of p-doped silicon clathrates
International audience -
Effects of repulsive and attractive ionized impurities on the resistivity of ...
International audience -
Threshold voltage study of scaled self-aligned In0.53Ga0.47As metal oxide sem...
A multi-gate n-type In0.53Ga0.47As metal oxide semiconductor field effect transistor is fabricated using the gate first self-aligned method and air-bridge technology...
