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Systèmes épitaxiés faiblement liés : le cas Ge/SrTiO3
With the recent developments of the microelectronic industry, the intrinsic limits of the classical CMOS materials are being reached because of the strong... -
Strains Induced by Point Defects in Graphene on a Metal
International audience -
Study of stress and strain during growth of metallic films; analysis of inter...
During the growth of nanometric metallic films, considerable stress can be generated. The mechanisms responsible for stress generation and relaxation are not well...
