-
Technology of monolithic integration of Side JFET
Silicon carbide (SiC) a semiconductor is as wide band gap, notable for its physical properties located between silicon and diamond. The inherent properties of silicon... -
Development of new gallium nitride based HEMT heterostructures for microwave ...
Nitride based materials are present in everyday life for optoelectronic applications (light emitting diodes, lasers). GaN remarkable properties (like large energy band...
