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Dissociation of H-related defect complex in InP using high energy light ions
High energy light ion irradiation has been used to anneal H-related defect complexes and to modify the electronic properties of semi-insulating InP (SI-InP). Raman and... -
High-sensitivity NO2 sensor based on n-type InP epitaxial layers
The structure and sensing properties of a novel resistive NO2 sensor based on n-type InP epitaxial layers have been presented. The studies of sensor resistance changes... -
Sensitivity of n-type InP epitaxial layers to NO2 sensor based on
The response time and signal stability were also investigated. Furthermore, the influence of surface states and near-surface region on sensor parameters in terms of... -
Indium phosphide and zinc phosphide luminescent nanocrystals : synthesis, coa...
This PhD investigation focuses on organometallic synthesis of indium phosphide (InP), zinc phosphide (Zn3P2) colloidal semiconductor nanoparticles (NPs) and core/shell...
