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Technology of heterostructure devices for satellite detection systems at mill...
In this work, Single Barrier Varactor Diodes and Coplanar Wave-Guides on a membrane were fabricated and characterized in AC regime.<br />The Single Barrier... -
Development of ultra-low noise HEMTs for cryoelectronics at <= 4.2 k
We report on DC and noise characteristics at 4.2 K of High Electron Mobility Transistors (HEMTs) which have been realized at LPN/CNRS. This work is aimed to develop... -
Modelling and test of integrated mechanical sensors based on AlGaN/GaN hetero...
ISBN : 978-2-84813-181-8 -
3D Integration of Si/SiGe heterostructured nanowires for nanowire transistors.
The goal of this thesis is to build and characterize nanowire based field-effect-transistors. These FET will have either back or wrapping gate using standard CMOS...
