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Structural and optical properties of MBE-grown InGaN/GaN nanowire heterostruc...
This work reports on the molecular-beam-epitaxial growth of InGaN/GaN nanowires on Si(111) substrates.The deposition of InGaN in nitrogen-rich conditions on... -
GaN based polar and nonpolar heterostructures grown on ZnO for optoelectronic...
This work focus on the integration of III-nitride materials, by molecular beam epitaxy (MBE), on ZnO based templates and substrates. The objective is to explore the...
