-
Realization and characterization of AlGaN/GaN HEMTs on silicon for high volta...
This thesis is a contribution to the development of AlGaN/GaN HEMTs on silicon substrates for low frequency and applications under high voltages (typically 600V) as... -
Technology of monolithic integration of Side JFET
Silicon carbide (SiC) a semiconductor is as wide band gap, notable for its physical properties located between silicon and diamond. The inherent properties of silicon...
