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OBIC measurements on avalanche diodes in 4H-SiC for the determination of impa...
International audience -
Characterizations of InAlN/AlN/GaN Transistors for S-Band Applications
International audience -
Realization and characterization of AlGaN/GaN HEMTs on silicon for high volta...
This thesis is a contribution to the development of AlGaN/GaN HEMTs on silicon substrates for low frequency and applications under high voltages (typically 600V) as...
