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Study of a piezoelectric bulk acoustic wave resonator in thin film technology
The studied resonator is part of an industrial project carried by NXP Semiconductors. The objective is the realization of a integrable RF MEMS resonator in order to... -
Electronic structure of wurtzite and zinc-blende AlN
International audience -
High energy ion irradiated III-N semiconductors (AlN, GaN, InN): study of poi...
Nitride semiconductors III N (AlN, GaN, InN) have interesting properties for micro-and opto-electronic applications. In use, they may be subjected to different types... -
GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN...
In the present paper, we describe the development of new AlN seed layers obtained by combining molecular beam epitaxy and low temperature physical vapour deposition...
