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Dark-field electron holography : a reliable technique for measuring strain in...
Strain engineering is now considered as one of the most important boosters of microelectronics among other technologies such as SOI (Silicon On Insulator) and high-κ... -
Terahertz imaging using strained-Si MODFETs as sensors
International audience -
3D Integration of Si/SiGe heterostructured nanowires for nanowire transistors.
The goal of this thesis is to build and characterize nanowire based field-effect-transistors. These FET will have either back or wrapping gate using standard CMOS...
